Chemical vapor deposition of B-doped polycrystalline diamond films: Growth rate and incorporation efficiency of dopants

The growth rate and the incorporation efficiency of dopants have been studied in the case of chemical vapor deposition of B-doped polycrystalline diamond films. The deposition rate is found to decrease with the addition of diborane in the gas phase. This is correlated with a modification of the plasma chemistry as observed by emission spectroscopy (decrease in the H/H2, CH/H, and C2/H ratios with the addition of diborane). The concentration of boron incorporated in the films is observed to vary with the square of the boron concentration in the gas phase.