The boron acceptor level in diamond was investigated using admittance spectroscopy. The conductance of a flame grown sample was measured between 125 and 200 K at five frequencies between 0.1 and 5.0 kHz using a 16.0 mV ac signal applied across a Schottky diode at zero dc bias. The admittance spectroscopy technique yielded a deep impurity level of 0.33 eV. From the same set of data, a hole capture cross section of 2×10−12 cm2 was also measured. The cross section reported here is assumed to be caused by ionized boron acceptors.
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Glesener et al. (1993) studied this question.