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Films of cubic ZnSe and ZnS have been grown epitaxially on [100] oriented GaAs substrates by vapor phase transport in flowing hydrogen. Thicknesses up to 200 µm over areas up to 5 cm 2 have been obtained. The ZnSe films are superior in crystalline quality to the ZnS films. The films exhibit low birefringent strain, good optical transmission, high resistivity, and near‐bulk electro‐optic constants. These properties make them suitable for use in information storage devices utilizing the longitudinal linear electro‐optic effect.
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Vohl et al. (1971) studied this question.
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