Spin-flip Raman scattering of wide-band-gap II-VI ternary alloys

Spin-flip Raman scattering spectroscopy has been applied to the study of the wide band-gap semiconductor materials ZnSₓSe_1-x and Zn_1-xMgₓSe in order to determine the dependence on the composition, x, of the gyromagnetic ratio of electrons in the Γ₆ conduction band and, thereby, to obtain a better understanding of the parameters underlying the band structure of these materials. The measured values are discussed in terms of the k·p perturbation theory for the band structure near the direct band gap, at different levels of approximation, and it is found that the observed dependence on composition can be reproduced well by the use of suitable interpolation schemes between the binary end members of the range of materials. Preliminary results for the related quaternary material Zn_1-xMgₓSySe_1-y are discussed within the same model.