This paper describes a compact, self-complementary square-spiral antenna on a GaAs substrate with a broadside high-directivity (∼29 dB) frequency-independent pattern when coupled through a silicon hyperhemisphere. The driving-point resistance undulates between ∼100 and 300Ω from 200 GHz to 1 THz—much higher than the 72Ω value from Booker's modified formula, but quite beneficial for coupling to high-impedance broadband devices.
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Brown et al. (2006) studied this question.
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