Insights into the electronic properties of InGaAsN: the effect of nitrogen from band structure to devices

We present a unified picture of our studies of the nitrogen-specific properties of InGaAsN. Nitrogen-induced bandgap reduction and symmetry-breaking are examined with band-structure calculations and pressure-dependent optical measurements for an idealized, 'ordered' InGaAsN alloy. Including disorder and large conduction band random alloy fluctuations, we describe photoluminescence linewidths and electron mobilities and propose a N-induced mobility-edge. In transport and device experiments, extrinsic material properties (inhomogeneities, defects, etc) mask any intrinsic electron localization.