Auger recombination in PbSnTe‐like semiconductors

In semiconductors with PbSnTe‐like band structure the Auger coefficient Cn is investigated for most probable eeh transitions taking into account a nonparabolic approximation (NPA). Considering mirror‐symmetric hyperbolic bands, singularities in the so‐called “activation energy” appear which are removed if deviations from the hyperbolicity are included. At high temperatures Tl the value of Cn in NPA has the same order of magnitude as the value C proposed by Emtage and is nearly independent of temperature; if Tl < 77 K the value of Cn strongly decreases and differs by orders of magnitude from C . The obtained results are compared with experimental data.