Molecular beam epitaxy of phase pure cubic InN

Cubic InN layers were grown by plasma assisted molecular beam epitaxy on 3C-SiC (001) substrates at growth temperatures from 419to490°C. X-ray diffraction investigations show that the layers have zinc blende structure with only a small fraction of wurtzite phase inclusions on the (111) facets of the cubic layer. The full width at half maximum of the c-InN (002) x-ray rocking curve is less than 50arcmin. The lattice constant is 5.01±0.01Å. Low temperature photoluminescence measurements yield a c-InN band gap of 0.61eV. At room temperature the band gap is about 0.56eV and the free electron concentration is about n∼1.7×1019cm−3.