The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump–probe measurements. Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.
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Giniūnas et al. (2001) studied this question.