We have newly developed an imprinting technique using liquid-phase hydrogen silsesquioxane (HSQ) as an alternate replication material for spin-coated HSQ resin currently used. Various patterns with linewidth ranging from 25 nm to 300 µm were demonstrated by imprinting using liquid-phase HSQ. We simultaneously fabricated arbitrary patterns including both submicron and greater than one hundred micron patterns by a one-step process. Moreover, after imprinting, the residual HSQ layer that remained in the compressed area was less than 10 nm thick.
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Nakamatsu et al. (2006) studied this question.
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