We report results of calculations of the transport processes that control the parabolic-regime oxidation of silicon. The paper discusses dry oxidation, and verifies the role of oxygen transport by diffusion of neutral molecular oxygen. Our CNDO molecular orbital calculations for quartz predict an overall activation energy of 1·18eV (experiment: 1·23eV for dry oxidation: 1·17eV for oxygen diffusion through fused silica) composed of a solvation energy of 0·34eV and a motion energy of 084 eV. These results support Mott's arguments that the motion component is the major component of the energy. Wet oxidation is discussed in a subsequent paper.
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Hagon et al. (1987) studied this question.
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