We present a photoluminescence investigation of the electronic properties of a strained GaSb-AlSb quantum well under hydrostatic pressure. Our experiment, performed at liquid-helium temperature, permits us to measure a pressure shift of the quantized exciton smaller than the GaSb band-gap shift. Such an effect is analyzed in the framework of a model calculation which takes account of the nonparabolicity and of the change of the quantized Rydberg (R*) versus pressure. We find 1/R*(dR*/dP)={~}1%/kbar. We estimate a valence-band offset {Δ}Eᵥ{~}40 meV.
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Lefèbvre et al. (1987) studied this question.
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