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Undoped p-type gallium antimonide single crystals were grown by a steady-state temperature-gradient transport method. The melt composition was varied from 0.62 to 0.84 atom fraction Sb. The lowest carrier concentration achieved was 4×1016 holes/cm3, at 300°K. It was concluded that no significant further reduction in carrier concentration is to be expected for GaSb grown from Sb-rich melts under quasiequilibrium conditions.
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Rado et al. (1972) studied this question.
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