Electronic interface reconstruction at polar-nonpolar Mott-insulator heterojunctions

We report on a theoretical study of the electronic interface reconstruction (EIR) induced by polarity discontinuity at a heterojunction between a polar and a nonpolar Mott insulator, and of the two-dimensional strongly correlated electron systems (2DSCESs) which accompany the reconstruction. We derive an expression for the minimum number of polar layers required to drive the EIR, and discuss key parameters of the heterojunction system which control 2DSCES properties. The role of strong correlations in enhancing confinement at the interface is emphasized.