InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency

Grown by metalorganic vapour phase epitaxy (MOVPE) In x Ga 1− x As metamorphic laser power converters have been considered. Metamorphic buffer designs with high quality top layers have been developed. Photovoltaic converters with In 0.24 Ga 0.76 As photoactive area and optimised buffer have demonstrated efficiency 41.4% for 1064 nm monochromatic radiation conversion and ∼40% for laser power conversion.