Three-terminal single-electron transistor devices utilizing Al∕Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets (SMMs). The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1–3nm gaps between which the SMM can be situated. Conductance through a single Mn12 (3-thiophenecarboxylate) displays the Coulomb blockade effect with several excitations within ±40meV.
No takes yet. Share an insight, caveat, or question.
A 2007 study studied this question.