Charge offset stability in tunable-barrier Si single-electron tunneling devices

The problem of charge offset drift in single-electron tunneling (SET) devices can preclude their useful application in metrology and integrated devices. We demonstrate that in tunable-barrier Si-based SET transistors there is excellent stability, with a drift that is in general less than 0.01e; these devices exhibit some unwanted sensitivity to external perturbations including temperature excursions. Finally, we show that these devices can be “trained” to minimize their sensitivity to abrupt voltage changes.