Answers are grounded in this paper and cite their sources.
We have investigated the morphologies and gap energies of In0.46Ga0.54As quantum dots (QDs) by using scanning tunneling microscopy/spectroscopy. The measured gap energy increases with decreasing dot height in the range of 1.7–6.6 nm. The gap energy has been calculated using a one-dimensional quantum well model taking into account a variation of In composition. Comparison of the observed height dependence and the calculation indicates the one-dimensional quantum confinement of carriers and the In enrichment in a QD.
No takes yet. Share an insight, caveat, or question.
Yamauchi et al. (2001) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: