For the relative dielectric constant of aluminium antimonide AlSb a value of 10.9 was observed using a microwave interference technique at liquid nitrogen temperature. Since material of sufficiently high resistivity was available only in polycrystalline form, the same technique was applied also to polycrystalline silicon, and it was shown that the same results are obtained for single-crystal and polycrystalline material.
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Seeger et al. (1991) studied this question.
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