Raman scattering measurements on amorphous a-Si:H/a-SiNₓ:H and a-Si:H/a-SiOₓ superlattices indicate the first observation of heterostructure effects on the phonons of noncrystalline solids. With decreasing thickness the a-Si:H Raman spectra imply increased bond-angle disorder associated with interfacial induced modifications of network formation. The results suggest that interfacial bonding constraints in amorphous superlattices result in local disorder that qualitatively differs in character from that of crystalline systems.
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Maley et al. (1985) studied this question.
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