Ballistic rectification is demonstrated in a nanoscale waveguide cross junction consisting of a straight voltage stem channel and current-injecting branches which oppositely merge into the stem under an angle ϕ<90°. According to a simple billiardlike picture for both current directions, the injected electrons are deflected at the opposite boundary, thus charging one arm of the stem according to their preferential momentum component. The rectification efficiency has a maximum value of 2.6% and shows a characteristic voltage dependence, which is explained by the availability of unoccupied states in the voltage stem at low voltage and by carrier heating at high voltage.
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Knop et al. (2006) studied this question.
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