Intrinsic electrical transport and performance projections of synthetic monolayer MoS 2 devices

We demonstrate monolayer (1L) MoS 2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated 1L devices over a wide range of carrier densities (up to ∼10 13 cm −2 ) and temperatures (80–500 K). Transfer length measurements decouple the intrinsic material mobility from the contact resistance, at practical carrier densities (>10 12 cm −2 ). We demonstrate the highest current density reported to date (∼270 μ A μ m −1 or 44 MA cm −2 ) at 300 K for an 80 nm long device from CVD-grown 1L MoS 2 . Using simulations, we discuss what improvements of 1L MoS 2 are still required to meet technology roadmap requirements for low power and high performance applications. Such results are an important step towards large-area electronics based on 1L semiconductors.