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The influence of carbon on thermal donor generation and on oxygen precipitation is investigated for Czochralski silicon. The results confirm the fact that carbon inhibits thermal donor generation at 450°C and accelerates the rate of oxygen precipitation at higher temperature. New and very interesting results are found on the influence of carbon in the generation of thermal donors at 750°C. From the results it is deduced that the stable donor complexes generated at 750°C involve carbon and oxygen atoms.
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J. Leroueille (1981) studied this question.
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