The use of certain metal hydrides to promote alloying to silicon is described. Good ohmic contacts to both n‐ and p ‐type silicon have been made. The electrical resistance of a typical 1 cm 2 contact is less than 0.001 ohm. The depth of alloying may be controlled from 0.025 mm to 0.0025 mm depending on the alloy and the alloying temperature. Completed contacts exhibit tensile strengths in excess of 4500 psi.
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Sullivan et al. (1956) studied this question.