Bulk field poled LiNbO3 with a 3.3 µm domain period is used to frequency double unguided infrared emission generated by a high power semiconductor laser. At 432 nm, 2.8 mW is generated with CW and 10.5 mW with modelocked operation, respectively. Photorefractive effects are observed at room temperature.
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Goldberg et al. (1995) studied this question.
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