Charge Recombination and Band-Edge Shift in the Dye-Sensitized Mg2+-Doped TiO2Solar Cells

The effect of Mg 2+ ions substituted into the anatase lattice on the charge recombination and band-edge movement in dye-sensitized solar cells was investigated in this study. The HRTEM results indicated that Mg 2+ ions incorporation into the TiO 2 lattice led to the increased lattice spacing of the (101) plane of the anatase phase. Mg 2+ -doped TiO 2 could produce a blue shift in the optical absorption edge compared with that of the untreated samples. Detailed analysis of the open-circuit photovoltage ( V oc ) under different surface charge densities showed that the Mg 2+ -doped TiO 2 samples resulted in the negative shift of the TiO 2 conduction band about 70 mV in comparison with the untreated samples. From Raman spectra and light intensity-dependent variation of the short-circuit current density ( J sc ) of the solar cells, it could be concluded that the decreased efficiency of electron injection for DSCs with Mg 2+ -doped TiO 2 was attributed to the negative shift of the band edge in the Mg 2+ -doped TiO 2 electrode to obtain a decreased J sc . The electron diffusion coefficient in Mg 2+ -doped TiO 2 was found to be higher than that in TiO 2 at the same photoelectron density. We present evidence that the increase of trap states in Mg 2+ -doped TiO 2 as recombination channels to decrease the electron lifetime could compensate for the effect of band-gap widening to obtain a slightly increased V oc for DSCs with Mg 2+ -doped TiO 2 . It is suggested that the recombination channels should be suppressed to enhance the performance of dye-sensitized Mg 2+ -doped TiO 2 solar cells.