The valence-band offset of ZnO∕MgO (111) heterojunction has been directly measured by x-ray photoelectron spectroscopy. Excluding the strain effect, the valence-band offset is determined to be 0.87±0.20eV, and the conduction-band offset ΔEC is deduced to be −3.59±0.20eV, indicating that ZnO∕MgO heterojunction has a type-I band alignment. The conduction-band and valence-band offset of MgO∕ZnO is used to interpret the origination of p-type conduction in undoped MgxZn1−xO alloy and deeper acceptor level in undoped and N-doped p-type MgxZn1−xO alloy than in ZnO.
No takes yet. Share an insight, caveat, or question.
Li et al. (2008) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: