Resistivity of n -type degenerately doped silicon at low temperature: Dielectric-screening effects

Recent calculations of the dielectric enhancement of the resistivity of n-type degenerately doped germanium at low temperature is extended to silicon. We find, as in the Ge case, that Brooks-Herring scattering significantly underestimates the resistivity but the inclusion of the effects of dielectric screening is sufficient to remove the discrepancy between theory and experiment.