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We apply two-photon absorption spectroscopy as a novel tool to study residual strain in ZnSe epitaxial layers grown on GaAs substrates. Taking advantage of the polarization selection rules, we find that ZnSe layers thicker than 2 μm suffer in-plane tensile strain of the order of 10−4. Deformation potential for the ZnSe layer is determined directly from two-photon data to high accuracy.
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Minami et al. (1991) studied this question.
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