Electric Field-Induced Strain of PbZrO3 Films

In this paper, we report an electric field-induced strain of antiferroelectric (AFE) PbZrO 3 (PZ) films deposited by rf-sputtering. The PZ films grown on the (001)Pt/(001)MgO substrate are preferentially oriented along the c axis in a tetragonal system which is perpendicular to the AFE polar direction. On the other hand, the PZ films on the (111)Pt/Ti/Si substrate have a random orientation, and they show clear double P – E hysteresis loops, representing the AFE–ferroelectric (FE) phase transition caused by the application of an electric field. The transverse strain induced by the electric field is evaluated by the measurements of tip displacement of PZ/substrate unimorph cantilevers. The PZ films on the Pt/Ti/Si substrate exhibit clear strain jump corresponding to the AFE–FE phase transition, and a maximum transverse strain of 5 × 10 -5 is obtained at an electric field of -150 kV/cm.