Synthesis and characterization of nanoparticles of semiconducting metal suplhide and their application

Cadmium Sulphide (CdS) [II-VI group n-type semiconductor] and Copper Sulphide (Cu 2 S) [I-VI group p-type semiconductor] have large commercial applications like solar cell, gas sensor etc. Wide band gap CdS semiconductor was used as the transparent window material together with narrow band gap Cu 2 S semiconductor used as the absorber layer. Thioglycerol capped CdS and Cu 2 S nanoparticles were synthesized by using the non-aqueous chemical method at room temperature. CdS and Cu 2 S films were prepared on fluorine doped tin oxide (FTO) glass substrates by using the simple dip coating method at different dip times and heat treated in air. CdS and Cu 2 S nanoparticles were analysed by Ultraviolet-Visible absorption spectroscopy, photoluminescence (PL) and transmission electron microscopy (TEM). CdS and Cu 2 S films were investigated by scanning electron microscopy (SEM), energy dispersive analysis by x-rays (EDAX), mapping and atomic force microscopy (AFM). Thicknesses of films were determined using laser profilometer. Previously, preparation of solar cells using CdS and Cu 2 S films deposited by dip coating method has not been reported. In this study, thin-film solar cells with p-n heterojunction having enhanced conductivity, excellent solar energy conversion efficiency, enhanced fill factor, low cost and easy fabrication were prepared to increase the quality of solar cells.