A p-i-r Semiconductor Radiation Detector for Use with Beta and Gamma Rays and Minimum Ionizing Particles

The development of a p-i-n detector is discussed. The detectors are fabricated from readily available lowresistivity silicon using the basic techniques of Pell. Some prelimibary determinations of the response of these detectors to known amounts of incidert radiation were made. The response of the detectors to photons, electrons, and heavy charged particles was determined. Two methods of identlfying gamma emitters with the p-i-n junction detector are described. (M.C.G.)