Growth of Cubic Boron Nitride Films by Low-Pressure Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

Cubic boron nitride ( c-BN) films were deposited on silicon (100) wafer substrates from the B2H6+N2+He+Ar system at pressures ranging from 5×10-4–2×10-3 Torr by low-pressure inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD). The substrate bias was controlled by varying auxiliary rf power to the substrate. The effects of the process parameters such as substrate bias and working pressure on the c-BN growth have mainly been investigated. The results are discussed in relation to the plasma diagnostics by electric probe and optical emission spectroscopy.