The theory of space-charge-limited current (SCLC) measurement for determining an arbitrary energy distribution of traps of insulators and semiconductors is put forward in this article. As a result, no restriction is given to the trap densities of the sample tested, which is caused by neglecting free carriers in the previous theories of SCLC measurement. It is shown by numerical computations that the relative errors near the band edges that usually differ by as much as several orders of magnitude is greatly improved. The refinement is also expected to be useful in the high-temperature region.
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Lianggang Lu (1993) studied this question.
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