Thermoelectric properties of silicon at high pressures in the region of the semiconductor-metal transition

The thermo emf in Czochralski grown silicon single crystals annealed at 450°C was experimentally studied in a range of pressures up to 16 GPa in a chamber with synthetic diamond anvils. There is a correlation between the curves of thermo emf versus pressure, the semiconductor-metal transition pressure, and the mechanical properties (microhardness, compressibility) of samples with various oxygen content. The values of thermo emf in the high-pressure metallic phases have been determined.