Semiconductor-Metal Transitions in Some Materials at High Pressures up to 30 GPa

An approach is suggested for the investigation of pressure-induced semiconductor–metal phase transitions in a wide group of materials based on both the model of p-bonds and Peierls distortion of lattice and the experimental results of thermoelectrical and magnetoresistance measurements at high pressures P up to 30 GPa. Cubic sphalerite (HgSeS and HgTeS), sphalerite with 1/3 vacancy in cation sites (In2Te3 and Ga2Te3), trigonal chain semiconductors (Te and Se), I2, and chalcogenides (Zn, Cd, Sm, Eu) are analyzed in the frame of this approach.