A theoretical study of the effects of the light pumping on the conductivity of the multi‐valley n‐type semiconductors is presented. It is shown that the existence of the resonant impurity states associated with the secondary minima cause the peculiarities in the conductivity dependence on the pumping intensity. Under certain conditions this dependence should contain a hysteresis loop.
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T. S. Dneprovskaya (1972) studied this question.
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