Millimeter-sized CsPbBr 3 single crystals were prepared via a facile solvent-evaporation method in ambient environment. The heterojunction between p-type CuI and n-type CsPbBr 3 was formed by a simple immersion process. The as-integrated CsPbBr 3 /CuI device exhibits a good rectifying behavior (ratio of 250 at ±2 V). In particular, the photodetector shows excellent self-powered characteristics under 540 nm light illumination, including high photocurrent (near 100 nA); high photosensitivity (on/off ratio of 1.5 × 10 3 ); fast response speed (0.04/2.96 ms); and good wavelength selectivity (565–525 nm), responsivity (1.4 mA W –1 ), and detectivity (6.2 × 10 10 Jones). This work provides a simple, low-cost, and effective method for preparing millimeter-level CsPbBr 3 single crystals. The simple device architecture further provides a promising approach for fabricating high-performance self-powered photodetectors.
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Zhang et al. (2019) studied this question.
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