A novel concept for modulating far-infrared light is presented based on the ‘‘photon-plasmon, plasmon-photon’’ interaction with a thin layer of a free-electron gas in a n-doped semiconductor. For oblique incidence of p-polarized light at the plasma frequency of the electrons, high-reflection properties arise due to plasma resonance. The influence of all the constituent parameters (angle of incidence, electron mobility and density, thickness of the layer, etc.) on the reflectivity is discussed. The plasma frequency, and hence the reflectivity, can be modulated by changing the effective mass or the density of the electrons. This leads to a small, integrable, and fast modulable mirror, which can be used as a switching device (electrically or optically driven) or even as a way of frequency modulation.
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Kuijk et al. (1989) studied this question.
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