The intrinsic gettering of Fe in Cz p-Si is studied using NAA, TEM, structural etching, DLTS, and EBIC. It is shown that in the case of Fe contamination up to about 1015 atoms cm−3 a decrease of the iron concentration in the surface-near region can be achieved by gettering. Besides this it is found that the volume defect formation due to heat treatment can be significantly influenced by an iron contamination in the order of 1015 atoms cm−3. Peculiarities of the FeB-pair formation in the case of volume-defect depth profiles are discussed. It is shown that the electrical activity of volume defects is not influenced by the Fe concentration in the range investigated.
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Schmalz et al. (1987) studied this question.
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