Si(111)7×7 and Si(111)√3¯×√3¯-al surface-structure analysis by ion-induced Auger-electron spectroscopy

Si(111)7×{}7 and Si(111){}3 ×{} {}3 -Al surface structures have been studied by ion-induced Auger-electron spectroscopy. It has been revealed that the azimuthal dependence of the Auger-electron yield is very sensitive to differences in surface atomic structure at grazing ion incidence. Experimental results have been compared with computer simulations. It has been found that the dimer-adatom stacking-fault model is best as the Si(111)7×{}7 structure model, and as yet no model proposed for the Si(111){}3 ×{} {}3 -Al structure has been satisfactory.