In this work, depletion-mode magnesium doped zinc-oxide (MgZnO) channel thin film transistors (TFTs) with zirconium oxide (ZrO 2 ) gate insulator were fabricated using radio frequency magnetron sputtering deposition. Sputtered MgZnO TFT channel layer performed an average transmittance of 90% and an improved energy bandgap of 5.02 eV after 700°C post annealing. X-ray photoelectron spectroscopy (XPS) results indicated that the binding energy of Zn-O bonds and Mg-O bonds were enhanced following with the increasing of the post annealing temperatures. The low frequency noise spectra also indicated that the ZrO 2 /MgZnO was dominated by flicker noise and gate leakage induced noise was suppressed.
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Chiu et al. (2011) studied this question.
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