Describes an apparatus and a heterojunction that can be used under 2.6 eV, for any temperature; these were used for measurements of electroreflection by a surface barrier. Delta R/R of 10 -6 was measured with a voltage modulation of 0.2 mV. Quantitative measurements showed that there were few surface states and that the radial electric field was homogeneous. A magneto-electroreflection spectrum of Ge shows an example of use at low temperature.
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Alibert et al. (1972) studied this question.
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