The temperature dependence of extrinsic and intrinsic photocurrent, in undoped semi-insulating GaAs containing EL2, in the range 20 K to 200 K is studied. The photocurrent increases ecponentially as the temperature is decreased down to 50 K and then decreases slightly for lower temperatures. It is argued that the exponential increase in photocurrent is due to the thermal activation energy of hole capture cross-section of the lifetime controlling centre.
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Mohapatra et al. (1989) studied this question.
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