The electrical conductivity of In 2 O 3 ‐ ZrO 2 as well as In 2 O 3 solid solutions doped with SnO 2 , CeO 2 , Nb 2 O 5 , Pr 6 O 11 , and MgO is investigated, in the temperature range between room temperature and 1300°C, and in the oxygen partial pressure range between 5 × 10 − 5 and 1 atm. In 2 O 3 doped with ZrO 2 is an electronic conductor, while ZrO 2 doped with In 2 O 3 is an oxygen‐ionic conductor. The two‐phase material of the cubic ( fcc ) ZrO 2 + cubic ( bcc ) In 2 O 3 solid solutions is a 3‐dimensional composite of ionic and electronic conductors. The single‐phase In 2 O 3 doped with ZrO 2 is an electronic conductor with a conductivity up to 7 × 10 4 Sm − 1 in air. Two maxima in electrical conductivity are found, one in the two‐phase region and one in the In 2 O 3 single‐phase region. Lattice defects responsible for electronic conduction in pure and doped In 2 O 3 are discussed. The defect models for In 2 O 3 doped with ZrO 2 are proposed, and the Kröger‐Vink diagram is constructed. The metastable solubility of dopants in In 2 O 3 due to the slow phase separation kinetics influences the electronic conductivity. ZrO 2 is a most effective donor for increasing electronic conductivity of In 2 O 3 , among hypervalent metal oxides including SnO 2 , Nb 2 O 5 , and CeO 2 .
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Sasaki et al. (1994) studied this question.