We report on the first experimental investigations of the power-handling capabilities of SiGe heterojunction bipolar transistors (HBT's) at C-band frequencies. Multifinger HBT's in common-emitter (CE) and common-base (CB) configuration were matched using high Q matching networks. At a frequency of 5.7 GHz the CE and the CB class A amplifier exhibit a 1-dB compression output power of 18 and 20 dBm, respectively. A power-added efficiency (PAE) of more than 30% and a output power density of 1 mW/μm2at 4 V V/sub CB/ were observed.
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Erben et al. (1995) studied this question.
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