Monolithically integrated 17 and 25 GHz SiGe-HBT oscillators are presented. The monolithic microwave integrated circuits (MMICs) are fabricated using the commercially available TEMIC SiGe process. The oscillators deliver 8 dBm output power at 17 GHz and 1.2 dBm at 25 GHz with phase noise < –90 dBc/Hz at 100 kHz offset, which are record values for MMICs on low-resistivity silicon substrate.
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Kuhnert et al. (2000) studied this question.
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