GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors

This is the authors' abstract. We don't add key points for this paper.

We have fabricated 3 μm gate length self-aligned, depletion mode GaAs metal insulator semiconductor field effect transistors exhibiting transconductances, typically in the vicinity of 160 mS/mm. This achievement is attributed to the use of Si3N4 as the gate dielectric with a few monolayers of a Si/Ge interface layer between the GaAs channel layer and the insulator. The Si3N4/Si/Ge insulator structure is grown in situ using a plasma-enhanced chemical vapor deposition system which is connected by an ultrahigh vacuum transfer tube to an adjacent III-V molecular beam epitaxy system. Nearly ideal capacitance-voltage curves (compared to previous publications) suggest the existence of a high quality insulator/semiconductor interface. The lowest interface trap density that has been measured, as determined from the magnitude of the conductance peak is ∼2×1011 eV−1 cm−2.