Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy

Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy, Lieten, Ruben R., Maeda, Tatsuro, Jevasuwan, Wipakorn, Hattori, Hiroyuki, Uchida, Noriyuki, Miura, Shu, Tanaka, Masatoshi, Locquet, Jean-Pierre