⌘+K

Pulse Explore Clubs Researchers Journals

Home Clubs Explore

May 7, 2001Applied Physics Letters

Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law

View Full Paper

Ask AI

Bookmark

Share

No abstract yet

We only have this paper's title and publication details.

Read it at the source→

Abstract

The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Li et al. (2001) studied this question.

synapsesocial.com/papers/6a928fb9cfe2d75514a5fb51 https://doi.org/10.1063/1.1370549

View Full Paper

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasersOriginal Research · 2001 · 53 citations
2Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen contentOriginal Research · 1992 · 219 citations
31.3 µm continuous-wave operation of GainNAslasers grown by metal organicchemical vapour depositionOriginal Research · 1999 · 78 citations
4High power CW operation of InGaAsN lasers at 1.3µmOriginal Research · 1999 · 114 citations
5Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloysOriginal Research · 1998 · 107 citations